Saturday, September 24, 2016

2.5D TSV MEOL flows


CoC/CoW CHIP-LAST

Interposer (TSV/BEOL/front side pads) from fab -> Front-side carrier bond (to handle thin interposers) -> TSV reveal / Si etch, TSV remove (CVD/CMP), backside RDL + C4 -> Flip & rebond carrier on backside -> CoW top die attach -> Carrier debond & dicing -> Module attach to substrate

This is good for large die & thin core substrates.

CoS

Interposer (TSV/BEOL/front side pads) from fab -> Front-side carrier bond (to handle thin interposers) -> TSV reveal / Si etch, TSV remove (CVD/CMP), backside RDL + C4 -> Carrier debond & dicing -> Interposer to substrate attach -> Top die attach to module

Leverage FCBGA process, low cost.

TSV-free approach / SLIM (Amkor) (CoS)

TSV-free Interposer (NO TSV/BEOL/front side pads) from fab -> Front-side carrier bond (to handle thin interposers) -> Si etch , backside RDL + C4 -> Carrier debond & dicing -> Interposer to substrate attach -> Top die attach to module

2.1D / Package Organic Interposer

Typical layer count could be 3+1+2+2: 3 layers with 2/2 L&S, 1 BU (above core) + 2 Core + 2 BU (below core)

WLCSP & New Integration Technologies


FO-WLP -> InFO PoP (TSMC) and SWIFT (Amkor)

Traditional FO-WLP (or WLFO) use "chip-first" approaches. This needs committing expensive KGD before the wafer reconstitution/reconfiguration process and is therefore at risk of yield loss from the RDL build up process. Also, capabilities of photoresist/dielectric processing with steppers/masks are challenged by the planarity of the wafer-level molding process, resulting in limitations in the design rules for these packages, with the tightest L&S being in the range of 6-10um. Typically only 1 or 2 RDL layers can be supported. Additionally, 3D POP package formats have new complexities, since those entail complex laser drilling/Cu plating for the TMV's/Cu Pillars on back side of the molded wafers to establish the 3D interconnects to the front side RDL.

In contrast, SWIFT uses a "chip-last" approach, since the RDL/backside is first separately built up on a carrier wafer, and then the KGD is chip-attached using a CoW approach. Since RDL buildup is now done pre-molding, the dielectric topology/planarity allows much finer L&S with stepper/mask capabilities, allowing upto 2/2 L&S and upto 3 RDL layers. This technology is also compatible with large die / package body sizes, supports upto 30um die pitch (Cu ubumps) and allows for 3D PoP integration through TMV's or Cu posts/pillars.

SLIM/SWIFT are package integration technologies developed by Amkor to bridge the L/S routing capability gap between applications needing TSV (<2um L&S) v/s standard packaging (>5um), primarily targeted for WLP - but also extended to flip-chip packages, leveraging conventional techniques & capabilities, allowing for high density & smaller footprints at relatively low cost. SLIM uses TSV-free interposer wafers (but retains BEoL & RDL, allowing <2um L&S routing) that simplifies interposer MEOL process (by eliminating need for CVD/CMP for TSV reveal during interposer MEOL), thins package form factor and reduces cost & simplifies supply chain (by allowing use of TSV-free wafers). SWIFT, on the other hand, uses passive carrier / interposer wafers that do not contain TSV or BEOL (but retains RDL, allowing 2-5um L&S). Top die could be attached on using CoW approach for both SLIM/SWIFT followed by wafer molding, interposer MEOL and topside RDL routing for POP as needed.

A guideline for NPI milestones







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